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TS256~512MUSD80
Description
Transcend microSD Card is non-volatile, which means no external power is required to retain the information stored on it. Besides, it is also a solid-state device that without moving parts to skip or break down. Based on original SLC(Single Level Cell) NAND flash chip, Transcend microSD card can offer an incredible combination of fast data transfer, great flexibility, excellent security and incredibly small size.
80x microSD Memory Card Features
* ROHS compliant product * Operating Voltage: 2.7 ~ 3.6V * Operating Temperature: -25 ~ 85C * Durability: 10,000 insertion/removal cycles * Fully compatible with SD card spec. v1.1 * Comply with SD Association File System Specification * Mechanical Write Protection Switch with microSD adapter * SD Host allows MultiMediaCard upward compatibility * Form Factor: 11mm x 15mm x 1mm
Placement
12345678
Front Pin Definition
Back
SD Mode Pin No. Name 1 2 3 4 5 6 7 DAT2 CD/DAT3 CMD VDD CLK VSS DAT0 DAT1 Type I/O/PP I/O/PP PP S I S I/O/PP I/O/PP Description Data Line [Bit2] Card Detect / Data Line [Bit3] Command / Response Supply voltage Clock Supply voltage ground Data Line [Bit0] Data Line [Bit1] Name RSV CS DI
VDD
SPI Mode Type Reserved I I S I S O/PP Chip Select Data In
Supply voltage
Description
SCLK
VSS
Clock
Supply voltage ground
DO RSV
Data out Reserved
8
S: Power Supply; I:Input; O:Output; PP:Push-Pull
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TS256~512MUSD80
Architecture
80x microSD Memory Card
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TS256~512MUSD80
Bus Operating Conditions * General
Parameter
Peak voltage on all lines All Inputs Input Leakage Current All Outputs Output Leakage Current -10 10 A -10 10 A
80x microSD Memory Card
Symbol
Min.
-0.3
Max.
VDD+0.3
Unit
V
Remark
* Power Supply Voltage
Parameter
Supply voltage Supply voltage specified in OCR register Supply voltage differentials (VSS1, VSS2) Power up time -0.3 0.3 250 V ms From 0v to VDD Min.
Symbol
VDD
Min.
2.0
Max.
3.6
Unit
V
Remark
CMD0, 15,55,ACMD41 commands Except CMD0, 15,55, ACMD41 commands
Note. The current consumption of any card during the power-up procedure must not exceed 10 mA.
* Bus Signal Line Load
The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line: CL = CHOST + CBUS + *CCARD Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded:
Parameter
Bus signal line capacitance Single card capacitance Maximum signal line inductance Pull-up resistance inside card (pin1)
Symbol
CL CCARD RDAT3
Min.
Max.
100 10 16
Unit
pF pF nH K
Remark
fPP 20 MHz, 7 cards fPP 20 MHz May be used for card detection
10
90
Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are connected separately to the SD Memory Card host.
Parameter
Pull-up resistance Bus signal line capacitance
Symbol
RCMD, RDAT CL
Min.
10
Max.
100 250
Unit
K pF
Remark
To prevent bus floating fPP 5 MHz, 21 cards
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TS256~512MUSD80
* Bus Signal Levels
80x microSD Memory Card
As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage.
To meet the requirements of the JEDEC specification JESD8-1A, the card input and output voltages shall be within the following specified ranges for any VDD of the allowed voltage range:
Parameter
Output HIGH voltage Output LOW voltage Input HIGH voltage Input LOW voltage
Symbol
VOH VOL VIH VIL
Min.
0.75* VDD
Max.
0.125* VDD
Unit
V V V V
Remark
IOH = -100 A @VDD min IOL = 100 A @VDD min
0.625* VDD VSS - 0.3
VDD + 0.3 0.25* VDD
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TS256~512MUSD80
* Bus Timing
80x microSD Memory Card
Parameter
Clock frequency Data Transfer Mode Clock frequency Identification Mode (The low freq. is required for MultiMediaCard compatibility.) Clock low time Clock high time Clock rise time Clock fall time Inputs CMD, DAT (referenced to CLK) Input set-up time Input hold time Outputs CMD, DAT (referenced to CLK) Output Delay time
Symbol
fPP fOD
Min
0 0
Max.
25 400
Unit
MHz KHz
Remark
CL 100 pF, (7 cards) CL 250 pF, (21 cards)
Clock CLK (All values are referred to min (VIH) and max (VIL)
tWL tWH tTLH tTHL
10 50 10 50 10 50 10 50
ns ns ns ns ns ns ns ns ns ns 14 ns
CL 100 pF, (7 cards) CL 250 pF, (21 cards) CL 100 pF, (7 cards) CL 250 pF, (21 cards) CL 100 pF, (7 cards) CL 250 pF, (21 cards) CL 100 pF, (7 cards) CL 250 pF, (21 cards) CL 25 pF, (1 cards) CL 25 pF, (1 cards) CL 25 pF, (1 cards)
tISU tIH tODLY 5
5 5 0
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TS256~512MUSD80
Reliability and Durability
Temperature Operation: -25C / 85C (Target spec) Storage: -40C (168h) / 85C (500h) Junction temperature: max. 95C
80x microSD Memory Card
Moisture and corrosion
Operation: 25C / 95% rel. humidity Storage: 40C / 93% rel. hum./500h Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009 10000 mating cycles 10N 0.10N*m , +/- 2.5deg max 1.5m free fall UV: 254nm, 15Ws/cm according to ISO 7816-1 No warppage; no mold skin; complete form; no cavities surface smoothness <= -0.1 mm/cm within contour; no cracks; no pollution (fat, oil dust, etc.)
Durability Bending Torque Drop test UV light exposure Visual inspection Shape and form
Above technical information is based on industry standard data and tested to be reliable. However, Transcend makes no warranty, either expressed or implied, as to its accuracy and assumes no liability in connection with the use of this product. Transcend reserves the right to make changes in specifications at any time without prior notice.
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